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CHZ180A-SEB - 180W L-Band HPA

General Description

The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor.

It allows broadband solutions for a variety of RF power applications in L-band.

It is well suited for pulsed radar application.

Key Features

  • Wide band capability: 1.2.
  • 1.4GHz.
  • Pulsed operating mode.
  • High power: > 180W.
  • High PAE: up to 53%.
  • DC bias: VDS = 45V @ ID_Q = 1.3A.
  • MTTF > 106 hours @ Tj = 200°C.
  • RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) Power Gain (dB) VDS = 45V, ID_Q = 1.3A, Pin = 39dBm Pulsed mode (100µs-10%) 60 25 58 Pulsed Mode 24 56 54 POUT 23 22 52 21 50 20 48 46 PAE 19 18 44 17 42 16 40 15 38 Gain 14.

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Datasheet Details

Part number CHZ180A-SEB
Manufacturer United Monolithic Semiconductors
File Size 642.15 KB
Description 180W L-Band HPA
Datasheet download datasheet CHZ180A-SEB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHZ180A-SEB 180W L-Band HPA GaN HEMT on SiC in SEB Package Description The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180A-SEB is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi-MMIC technology. It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance. Main Features ■ Wide band capability: 1.2 – 1.4GHz ■ Pulsed operating mode ■ High power: > 180W ■ High PAE: up to 53% ■ DC bias: VDS = 45V @ ID_Q = 1.