CHZ180A-SEB
CHZ180A-SEB is 180W L-Band HPA manufactured by United Monolithic Semiconductors.
180W L-Band HPA
Ga N HEMT on Si C in SEB Package
Description
The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180A-SEB is proposed on a 0.5µm gate length Ga N HEMT process. It is based on Quasi-MMIC technology. It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance.
Main Features
- Wide band capability: 1.2
- 1.4GHz
- Pulsed operating mode
- High power: > 180W
- High PAE: up to 53%
- DC bias: VDS = 45V @ ID_Q = 1.3A
- MTTF > 106 hours @ Tj = 200°C
- Ro HS Hermetic Flange Ceramic package
Pout(d Bm) & PAE(%)
Power Gain (d B)
VDS = 45V, ID_Q = 1.3A, Pin = 39d Bm Pulsed mode (100µs-10%)
60 25
Pulsed Mode
56 54 POUT
23 22
52 21
50 20
48 46
19 18
44 17
42 16
40...
