CHZ180A-SEB Datasheet 180w L-band Hpa

Manufacturer: United Monolithic Semiconductors

Overview: CHZ180A-SEB 180W L-Band HPA GaN HEMT on SiC in SEB Package.

Datasheet Details

Part number	CHZ180A-SEB
Manufacturer	United Monolithic Semiconductors
File Size	642.15 KB
Description	180W L-Band HPA
Datasheet	CHZ180A-SEB-UnitedMonolithicSemiconductors.pdf

The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor.

It allows broadband solutions for a variety of RF power applications in L-band.

It is well suited for pulsed radar application.

Wide band capability: 1.2.
1.4GHz.
Pulsed operating mode.
High power: > 180W.
High PAE: up to 53%.
DC bias: VDS = 45V @ ID_Q = 1.3A.
MTTF > 106 hours @ Tj = 200°C.
RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) Power Gain (dB) VDS = 45V, ID_Q = 1.3A, Pin = 39dBm Pulsed mode (100µs-10%) 60 25 58 Pulsed Mode 24 56 54 POUT 23 22 52 21 50 20 48 46 PAE 19 18 44 17 42 16 40 15 38 Gain 14.

Part Number	Description
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