CHZ180A-SEB Description
The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application.
CHZ180A-SEB Key Features
- Wide band capability: 1.2
- 1.4GHz
- Pulsed operating mode
- High power: > 180W
- High PAE: up to 53%
- DC bias: VDS = 45V @ ID_Q = 1.3A
- MTTF > 106 hours @ Tj = 200°C
- RoHS Hermetic Flange Ceramic package