CHZ180AaSEB Datasheet 180w L-band Hpa

Manufacturer: United Monolithic Semiconductors

Overview: CHZ180AaSEB 180W L-Band HPA GaN HEMT on SEB Package.

Datasheet Details

Part number	CHZ180AaSEB
Manufacturer	United Monolithic Semiconductors
File Size	623.76 KB
Description	180W L-Band HPA
Datasheet	CHZ180AaSEB-UnitedMonolithicSemiconductors.pdf

The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor.

It allows broadband solutions for a variety of RF power applications in L-band.

It is well suited for pulsed radar application.

Wide band capability: up to 1.5GHz.
Pulsed operating mode.
High power: > 180W.
High Efficiency.
DC bias: VDS = 45V @ ID_Q = 1.3A.
Package: Hermetic Ceramic-Metal.
MTTF > 106 hours @ Tj = 200°C.
RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) VDS = 45V, ID_Q = 1.3A, Pin = 39dBm Pulsed mode (100µs-10%) 60 25 58 Pulsed Mode 24 56 23 54 POUT 22 52 21 50 20 48 19 PAE 46 18 44 17 42 16 40 15 38 Gain 14 36 13 34 12 32.

Part Number	Description
CHZ180A-SEB	180W L-Band HPA
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