CHZ180AaSEB Description
The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application.
CHZ180AaSEB Key Features
- Wide band capability: up to 1.5GHz
- Pulsed operating mode
- High power: > 180W
- High Efficiency
- DC bias: VDS = 45V @ ID_Q = 1.3A
- Package: Hermetic Ceramic-Metal
- MTTF > 106 hours @ Tj = 200°C
- RoHS Hermetic Flange Ceramic package
- 27 Oct 20
- Parc Mosaic
CHZ180AaSEB Applications
- Wide band capability: up to 1.5GHz