CHZ180AaSEB Overview
Description
The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band.
Key Features
- Wide band capability: up to 1.5GHz
- Pulsed operating mode
- High power: > 180W
- High Efficiency
- DC bias: VDS = 45V @ ID_Q = 1.3A
- Package: Hermetic Ceramic-Metal
- MTTF > 106 hours @ Tj = 200°C
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- 1.9 1.3 ID_MAX Drain Current in
