CHZ180AaSEB Datasheet | United Monolithic Semiconductors

CHZ180Aa SEB 180W L-Band HPA Ga N HEMT on SEB Package Description The CHZ180Aa SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180Aa SEB is proposed on a 0.5µm gate length Ga N HEMT process. It is based on Quasi-MMIC technology. It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance. Main Features - Wide band capability: up to 1.5GHz - Pulsed operating mode - High power: > 180W - High Efficiency - DC bias: VDS = 45V @ ID_Q = 1.3A - Package: Hermetic Ceramic-Metal - MTTF > 106 hours @ Tj = 200°C - Ro HS Hermetic Flange Ceramic package Pout(d Bm) & PAE(%) VDS = 45V, ID_Q = 1.3A, Pin = 39d Bm Pulsed mode (100µs-10%) Pulsed Mode POUT Gain 30 1 Frequency (GHz) Performances given at the connector access planes. Power Gain (d B) Main Electrical Characteristics Tcase= +25°C, Pulsed mode Symbol Parameter Freq Frequency...