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CHZ180AaSEB - 180W L-Band HPA

General Description

The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor.

It allows broadband solutions for a variety of RF power applications in L-band.

It is well suited for pulsed radar application.

Key Features

  • Wide band capability: up to 1.5GHz.
  • Pulsed operating mode.
  • High power: > 180W.
  • High Efficiency.
  • DC bias: VDS = 45V @ ID_Q = 1.3A.
  • Package: Hermetic Ceramic-Metal.
  • MTTF > 106 hours @ Tj = 200°C.
  • RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) VDS = 45V, ID_Q = 1.3A, Pin = 39dBm Pulsed mode (100µs-10%) 60 25 58 Pulsed Mode 24 56 23 54 POUT 22 52 21 50 20 48 19 PAE 46 18 44 17 42 16 40 15 38 Gain 14 36 13 34 12 32.

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Datasheet Details

Part number CHZ180AaSEB
Manufacturer United Monolithic Semiconductors
File Size 623.76 KB
Description 180W L-Band HPA
Datasheet download datasheet CHZ180AaSEB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHZ180AaSEB 180W L-Band HPA GaN HEMT on SEB Package Description The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180AaSEB is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi-MMIC technology. It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance. Main Features ■ Wide band capability: up to 1.5GHz ■ Pulsed operating mode ■ High power: > 180W ■ High Efficiency ■ DC bias: VDS = 45V @ ID_Q = 1.