UF3C065030K3S Datasheet | UnitedSiC

27m W - 650V Si C Cascode | UF3C065030K3S Description United Silicon Carbide's cascode products co-package its highperformance G3 Si C JFETs with a cascode optimized MOSFET to produce the only standard gate drive Si C device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with remended RCsnubbers, and any application requiring standard gate drive. CASE G (1) CASE D (2) S (3) Part Number UF3C065030K3S Package TO-247-3L Marking UF3C065030K3S Features w Typical on-resistance RDS(on),typ of 27m W w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) Typical Applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds 1 Limited by TJ,max 2 Pulse width tp limited by TJ,max 3 Starting TJ = 25°C Symbol VDS VGS IDM EAS Ptot TJ,max TJ, TSTG Test Conditions DC TC=25°C TC=100°C TC=25°C L=15m H, IAS=4A TC=25°C Value 650 -25 to +25 85 62 230 120 441 175 -55 to 175 Units V V A A A m J W °C °C °C Rev. B, December 2018 1 For more information go to .unitedsic.. 27m W - 650V Si C Cascode |...