Description
United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
Features
- w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C
w Excellent reverse recovery
w Low gate charge
w Low intrinsic capacitance
w ESD protected, HBM class 2
w
Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
Typical.
UF3C065030K3S Datasheet
