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MIE-134G2 - GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-134G2 is a GaAs infrared emitting diode molded in clear, lensed side looking package.

The MIE-134G2 provides a broad range of intensity selection .

Key Features

  • Pin # 1 2 3 Name Cathode Anode Open NOTES : 1. All dimensions are in millimeters. 2. Tolerance is ± 0.25mm unless otherwise noted . 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 75 1 50 5 -55 C to +100 C -55oC to +100oC 260oC for 5.

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Datasheet Details

Part number MIE-134G2
Manufacturer Unity Opto Technology
File Size 39.58 KB
Description GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-134G2 Datasheet

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Part Number Description
MIE-134A1 AlGaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-134G2 is a GaAs infrared emitting diode molded in clear, lensed side looking package. The MIE-134G2 provides a broad range of intensity selection . 1.70 ± 0.10 (.067±.004) 0.30max (.012) 0.50max (.020) MIE-134G2 Unit: mm( inches ) Package Dimensions 4.00±0.10 (.158±.004) 0.80±0.10 (.032±.004) 2.05 (.081) 2.00±0.10 (.078±.004) 2.45±0.10 (.080±.004) 2.00max (.078) 0.25max (.010) 1 2 3 1 2 3 4.00 ± 0.10 (.158±.004) R1.1 2.00±0.10 (.078±.004) 3.09±0.10 (.154±.004) 3.00*0.5 (.118) 5.10±0.10 (.200±.004) 2.50±0.30 (.099±.012) l Selected to specific on-line intensity and radiant intensity ranges l Low cost, plastic side looking package Mechanically and spectrally matched to The MID-13A45 of phototransistor . 1.