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MIE-304A2 - AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-304A2 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.

Key Features

  • l l l l l 23.40MIN. (.921) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm) package, radiation angle: 25° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector 0.50 TYP. (.020) 1.00 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the pa.

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Datasheet Details

Part number MIE-304A2
Manufacturer Unity Opto Technology
File Size 31.83 KB
Description AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-304A2 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-304A2 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package. 3.00 (.118) MIE-304A2 Unit: mm (inches) Package Dimensions 1.00 (.039) 5.25 (.207) 4.00 (.158) SEE NOTE 2 0.80±0.50 (.032±.020) FLAT DENOTES CATHODE Features l l l l l 23.40MIN. (.921) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm) package, radiation angle: 25° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector 0.50 TYP. (.020) 1.00 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.