MIE-304A2 - AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
Datasheet Summary
Description
The MIE-304A2 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.
Features
l l l l l
23.40MIN. (.921)
High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm) package, radiation angle: 25° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector
0.50 TYP. (.020) 1.00 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3
A
C
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the pa.
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-304A2 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.
3.00 (.118)
MIE-304A2
Unit: mm (inches)
Package Dimensions
1.00 (.039)
5.25 (.207)
4.00 (.158)
SEE NOTE 2
0.80±0.50 (.032±.020) FLAT DENOTES CATHODE
Features
l l l l l
23.40MIN. (.921)
High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm) package, radiation angle: 25° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector
0.50 TYP. (.020) 1.00 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3
A
C
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.
MIE-304A2 Datasheet
