MIE-304G1 - GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
Datasheet Summary
Description
The MIE-304G1 is an infrared emitting diode in GaAs technology molded in water clear plastic package.
Features
l l l
23.40MIN. (.920)
Standard T-1 ( φ 3mm ) package, radiation angle : ±10° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector
0.50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100)
A
C
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings
@ TA=25 C Parameter Power Dissipation Peak Forward Current Continuous Forward Cu.
GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-304G1 is an infrared emitting diode in GaAs technology molded in water clear plastic package.
£r 3.00 (.118)
MIE-304G1
Unit : mm (inches )
Package Dimensions
5.25 (.207) 1.00 (.040)
4.00 (.157)
0.80 ±0.50 (.031±.020) FLAT DENOTES CATHODE
Features
l l l
23.40MIN. (.920)
Standard T-1 ( φ 3mm ) package, radiation angle : ±10° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector
0.50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100)
A
C
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the package.
MIE-304G1 Datasheet
