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MIE-304G1 - GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-304G1 is an infrared emitting diode in GaAs technology molded in water clear plastic package.

Key Features

  • l l l 23.40MIN. (.920) Standard T-1 ( φ 3mm ) package, radiation angle : ±10° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector 0.50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward Current Continuous Forward Cu.

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Datasheet Details

Part number MIE-304G1
Manufacturer Unity Opto Technology
File Size 31.64 KB
Description GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-304G1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-304G1 is an infrared emitting diode in GaAs technology molded in water clear plastic package. £r 3.00 (.118) MIE-304G1 Unit : mm (inches ) Package Dimensions 5.25 (.207) 1.00 (.040) 4.00 (.157) 0.80 ±0.50 (.031±.020) FLAT DENOTES CATHODE Features l l l 23.40MIN. (.920) Standard T-1 ( φ 3mm ) package, radiation angle : ±10° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector 0.50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the package.