• Part: MIE-304G1
  • Description: GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
  • Manufacturer: Unity Opto Technology
  • Size: 31.64 KB
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MIE-304G1 page 2
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MIE-304G1 Datasheet Text

GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-304G1 is an infrared emitting diode in GaAs technology molded in water clear plastic package. £r 3.00 (.118) MIE-304G1 Unit : mm (inches ) Package Dimensions 5.25 (.207) 1.00 (.040) 4.00 (.157) 0.80 ±0.50 (.031±.020) FLAT DENOTES CATHODE Features l l l 23.40MIN. (.920) Standard T-1 ( φ 3mm ) package, radiation angle : ±10° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector 0.50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the...