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MIE-324A2 - AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-324A2 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.

Key Features

  • l l l l 23.40MIN. (.920).

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Datasheet Details

Part number MIE-324A2
Manufacturer Unity Opto Technology
File Size 32.86 KB
Description AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-324A2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-324A2 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package. φ 3.55±0.25 (.140±.010) φ 3.10±0.20 (.122±.008) MIE-324A2 Unit : mm (inches ) Package Dimensions 4.28±0.20 (.169±.008) 5.28±0.30 (.208±.012) SEE NOTE 2 3.85 (.152) Features l l l l 23.40MIN. (.920) CATHODE l High radiant power and high radiant intensity Suitable ror DC and high pulse current operation Standard T-1 ( φ 3mm) package, radiation angle: 40° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector A 0.50 TYP. (.020) 1.00MIN. (.039) 2.54NOM. (.100) SEE NOTE 3 C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2.