AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-324A4 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.
φ 3.55±0.25 (.140±.010) φ 3.10±0.20 (.122±.008)
MIE-324A4
Unit : mm (inches )
Package Dimensions
4.28±0.20 (.169±.008) 5.28±0.30 (.208±.012) SEE NOTE 2
3.85 (.152)
Features
l l l l l
23.40MIN. (.920) CATHODE
High radiant power and high radiant intensity Suitable ror DC and high pulse current operation Standard T-1 ( φ 3mm) package, radiation angle: 40° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector
A
0.50 TYP. (.020)
1.00MIN. (.039) 2.54NOM. (.100) SEE NOTE 3
C
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2.
MIE-324A4 Datasheet
