The MIE-334L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package.
Features
l l l l l
23.40MIN. (.920)
High power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm ) package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector
0.50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100)
A
C
Notes : 1. Tolerance is ±0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings
@ TA=25 C Para.
MIE-324A2- AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
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GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-334L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package.
£r 3.00 (.118)
MIE-334L3
Package Dimensions
Unit : mm (inches )
1.00 (.040)
5.25 (.207)
4.00 (.157)
SEE NOTE 2
0.80 ±0.50 (.031±.020) FLAT DENOTES CATHODE
Features
l l l l l
23.40MIN. (.920)
High power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm ) package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector
0.50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100)
A
C
Notes : 1. Tolerance is ±0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the package.
MIE-334L3 Datasheet
