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MIE-544A4 - GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-544A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

Key Features

  • l High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ5mm) package, radiant angle : 40° Peak wavelength λP =940 nm Good spectral matching to si-photodetecto 2.54 NOM. (.100) SEE NOTE 3 0.50 TYP. (.020) 23.40 MIN. (.921) l l l l 1.00MIN. (.039) A C Notes : 1. Tolerance is ±0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the p.

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Datasheet Details

Part number MIE-544A4
Manufacturer Unity Opto Technology
File Size 32.33 KB
Description GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-544A4 Datasheet

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Part Number Description
MIE-544H4 GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-544A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. 7.62 (.300) MIE-544A4 Unit: mm(inch) Package Dimensions φ 5.05 (.199) 5.47 (.215) 5.90 (.230) 1.00 (.039) SEE NOTE 2 FLAT DENOTES CATHODE Features l High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ5mm) package, radiant angle : 40° Peak wavelength λP =940 nm Good spectral matching to si-photodetecto 2.54 NOM. (.100) SEE NOTE 3 0.50 TYP. (.020) 23.40 MIN. (.921) l l l l 1.00MIN. (.039) A C Notes : 1. Tolerance is ±0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.