MIE-544L3 - GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet Summary
Description
The MIE-544L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package.
Features
l
23.40 MIN. (.920) 0.50 TYP. (.020)
High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 (φ 5mm) package Peak wavelength λP =880 nm Good spectral matching to Si-Photodetecto Radiant angle : 40°
A
2.54 (.100) 1.00MIN (.040)
l
l
l l
C
l
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolut.
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-544L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package.
7.62 (.300)
MIE-544L3
Unit : mm (inches )
Package Dimensions
φ5.05 (.200)
5.47 (.215)
5.90 (.230)
1.00 (.040) FLAT DENOTES CATHODE
Features
l
23.40 MIN. (.920) 0.50 TYP. (.020)
High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 (φ 5mm) package Peak wavelength λP =880 nm Good spectral matching to Si-Photodetecto Radiant angle : 40°
A
2.54 (.100) 1.00MIN (.040)
l
l
l l
C
l
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3.
MIE-544L3 Datasheet
