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MIE-544L3 - GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-544L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package.

Key Features

  • l 23.40 MIN. (.920) 0.50 TYP. (.020) High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 (φ 5mm) package Peak wavelength λP =880 nm Good spectral matching to Si-Photodetecto Radiant angle : 40° A 2.54 (.100) 1.00MIN (.040) l l l l C l Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolut.

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Datasheet Details

Part number MIE-544L3
Manufacturer Unity Opto Technology
File Size 32.92 KB
Description GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-544L3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-544L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package. 7.62 (.300) MIE-544L3 Unit : mm (inches ) Package Dimensions φ5.05 (.200) 5.47 (.215) 5.90 (.230) 1.00 (.040) FLAT DENOTES CATHODE Features l 23.40 MIN. (.920) 0.50 TYP. (.020) High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 (φ 5mm) package Peak wavelength λP =880 nm Good spectral matching to Si-Photodetecto Radiant angle : 40° A 2.54 (.100) 1.00MIN (.040) l l l l C l Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3.