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MIE-824A4 - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-824A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology.

It is molded in water clear plastic package.

Key Features

  • l l l l 0.50 TYP. (.020) 23.40 MIN. (.921) High radiant power and high radiant intesity Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle: 120° 2.54 NOM. (.100) SEE NOTE 3 1.00MIN. (.039) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward.

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Datasheet Details

Part number MIE-824A4
Manufacturer Unity Opto Technology
File Size 31.49 KB
Description AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-824A4 Datasheet

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Part Number Description
MIE-824H2 GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-824A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology. It is molded in water clear plastic package. φ5.00 (.197) MIE-824A4 Package Dimensions Unit: inches 4.30 (.169) 5.80 (.228) SEE NOTE 2 1.00 (.039) FLAT DENOTES CATHODE Features l l l l 0.50 TYP. (.020) 23.40 MIN. (.921) High radiant power and high radiant intesity Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle: 120° 2.54 NOM. (.100) SEE NOTE 3 1.00MIN. (.039) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package.