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MIE-824L3 - GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Datasheet Summary

Description

The MIE-824L3 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology.

It is molded in water clear plastic package.

Features

  • l l l l l 0.50 TYP. (.020) 23.40 MIN. (.921) High radiant power and high radiant intesity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle: 80° A 2.54 NOM. (.100) SEE NOTE 3 1.00MIN. (.039) C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Paramet.

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Datasheet Details

Part number MIE-824L3
Manufacturer Unity Opto Technology
File Size 31.50 KB
Description GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-824L3 Datasheet
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GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-824L3 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology. It is molded in water clear plastic package. φ5.00 (.197) MIE-824L3 Unit: inches Package Dimensions 4.30 (.169) 5.80 (.228) SEE NOTE 2 1.00 (.039) FLAT DENOTES CATHODE Features l l l l l 0.50 TYP. (.020) 23.40 MIN. (.921) High radiant power and high radiant intesity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle: 80° A 2.54 NOM. (.100) SEE NOTE 3 1.00MIN. (.039) C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3.
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