VBsemi Electronics 2SJ469
P-Channel 30-V (D-S) MOSFET
| Part No. | 2SJ469 |
|---|---|
| Datasheet | 2SJ469 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 30-V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● Compliant to RoHS Directive 2002/95/EC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 30 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID - 5.8 - 4.6 - 4.1 - 3.2 A IDM - 30 Continuous Source Current (Diode Conduction)a IS - 2.3 - 1.1 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.5 1.6 1.3 0.8 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 40 70 24 Maximum 50 95 30 Unit °C/W 1 2SJ469-VB SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min.
