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4N0607 - TO252 N-Channel MOSFET

Download the 4N0607 datasheet PDF. This datasheet also covers the 4N0607-1 variant, as both devices belong to the same to252 n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • TrenchFET® Power MOSFET.
  • Package with Low Thermal Resistance.
  • 100 % Rg and UIS Tested TO-252 GDS Top View D G S N-Channel MOSFET.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (4N0607-1-VBsemi.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 4N0607
Manufacturer VBsemi
File Size 250.08 KB
Description TO252 N-Channel MOSFET
Datasheet download datasheet 4N0607 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4N0607-VB TO252 4N0607-VB TO252 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0050 0.0120 97 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested TO-252 GDS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.