LSD11N60E - N-Channel 600V Power MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

LSD11N60E n-channel 600v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	LSD11N60E
Manufacturer	VBsemi
File Size	277.53 KB
Description	N-Channel 600V Power MOSFET
Datasheet	LSD11N60E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LSD11N60E-VB www.VBsemi.com LSD11N60E-VB Datasheet N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 38 4 4.2 Single 0.