Datasheet Summary
LSD11N65E-VB
LSD11N65E-VB Datasheet
.VBsemi.
N-Channel 650V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
38 4 4.2
Single
TO-220 FULLPAK
Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
APPLICATIONS
- Server and tele power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
GDS Top View
S N-Channel...