| Part Number | LSD11N65E Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
LSD11N65E-VB
LSD11N65E-VB Datasheet
N-Channel 650V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configur.
* Low figure-of-merit (FOM) Ron x Qg * Low input capacitance (Ciss) * Reduced switching and conduction losses * Ultra low gate charge (Qg) * Avalanche energy rated (UIS) APPLICATIONS * Server and telecom power supplies * Switch mode power supplies (SMPS) * Power factor correction power supplies (PFC. |
LSD11N65E Datasheet and Specifications PDF
The LSD11N65E is a N-Channel 650V Power MOSFET.
| Part Number | LSD11N65E Datasheet |
|---|---|
| Description | N-channel 650V Power MOSFET |
| Manufacturer | Lonten |
| Overview |
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superio.
* Ultra low RDS(on) * Ultra low gate charge (typ. Qg = 34nC) * High body diode ruggedness * Easy to use * 100% UIS tested * RoHS compliant TO-251 TO-252,TO-263 TO-220 TO-220MF TO-247 TO-262 Applications D * PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC S. |