LSD11N65F - N-Channel 650V Power MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS) Available D G S N-Channel MOSFET.

LSD11N65F n-channel 650v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	LSD11N65F
Manufacturer	VBsemi
File Size	265.75 KB
Description	N-Channel 650V Power MOSFET
Datasheet	LSD11N65F Datasheet

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Full PDF Text Transcription (Reference)

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LSD11N65F-VB LSD11N65F-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 109 0.