LSD11N65F Description
LSD11N65F-VB LSD11N65F-VB Datasheet /$IBOOFM7 %4 Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 109 0.17 15 31 Single TO-220 FULLPAK GDS.
LSD11N65F Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)