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VBA2102M
P-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 100
0.160 at VGS = - 10 V 0.200 at VGS = - 4.5 V
ID (A) - 2.5c - 2.3c
Qg (Typ.) 23.2 nC
SO-8
FEATURES • TrenchFET® Power MOSFET • 100% Rg and UIS Tested
APPLICATIONS • Active Clamp in Intermediate DC/
DC Power Supplies • H-Bridge High Side Switch for
Lighting Application
S
S1 S2 S3 G4
8D 7D 6D 5D
G D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C IDM
Continuous Source-Drain Diode Current
Avalanche Current Single-Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
IS
L = 0.
VBA2102M Datasheet
