VBsemi Electronics VBA2102M
P-Channel MOSFET
| Part No. | VBA2102M |
|---|---|
| Datasheet | VBA2102M Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100% Rg and UIS Tested
APPLICATIONS
● Active Clamp in Intermediate DC/ DC Power Supplies● H-Bridge High Side Switch for Lighting Application S S1 S2 S3 G4 8D 7D 6D 5D G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on TC = 25 °C. Limit - 100 ± 20 - 2.5 - 2.3 - 2a, b - 1.6a, b - 15 - 4.9 - 2.5a, b - 15 11.25 5.9 3.8 3.1a, b 2a, b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Foot (Drain) Notes: a.
