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VBA2107
P-Channel 12-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0050 at VGS = - 4.5 V
- 12
0.0065 at VGS = - 2.5 V
0.0100 at VGS = - 1.8 V
ID (A) - 16 - 15 - 13
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Load Switch • Battery Switch
S
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 12
V
VGS
±8
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
- 16
- 10
- 11.5
-8
A
IDM
- 50
Continuous Source Current (Diode Conduction)a
IS
- 2.7
- 1.
VBA2107 Datasheet
