VBE2610N Description
VBE2610N P-Channel 60-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 30 - 25 Qg (Typ).
VBE2610N Key Features
- TrenchFET® Power MOSFET
- 100 % UIS Tested
VBE2610N is P-Channel MOSFET manufactured by VBsemi.
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|---|---|
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VBE2610N P-Channel 60-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 30 - 25 Qg (Typ).