VBE2610N Overview
VBE2610N P-Channel 60-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 30 - 25 Qg (Typ).
VBE2610N Key Features
- TrenchFET® Power MOSFET
- 100 % UIS Tested
VBE2610N Datasheet Details
| Part number | VBE2610N |
|---|---|
| Datasheet | VBE2610N-VBsemi.pdf |
| File Size | 209.61 KB |
| Manufacturer | VBsemi |
| Description | P-Channel MOSFET |
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