VBE2658 Datasheet | VBsemi

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - 100 % UIS Tested - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - High Side Switch for Full Bridge Converter - DC/DC Converter for LCD Display GDS Top View Drain Connected to Tab D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulsea IAS L = 0.1 m H Power Dissipation TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Based up on TC = 25 °C. t  10 s Steady State Symbol Rth JA Rth...