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VBE2625A
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.020 at VGS = - 10 V - 60
0.025 at VGS = - 4.5 V
ID (A) - 50 - 45
TO-252
FEATURES • TrenchFET® Power MOSFET • Material categorization:
APPLICATIONS • Load Switch
S
www.VBsemi.com
G
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 60
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
ID
- 50 - 40
A
IDM
- 160
Avalanche Current
IAS
- 50
Single Pulse Avalanche Energya
L = 0.1 mH
EAS
125
mJ
Power Dissipation
TC = 25 °C TA = 25 °C
PD
113c 2.
VBE2625A Datasheet
