VBGP1201N Datasheet | VBsemi

FEATURES - SGT technology Power MOSFET - 100 % Rg and UIS tested - Maximum 150 °C junction temperature TO-247 Top View N-Channel MOSFET APPLICATIONS - Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting - Synchronous rectification - DC/DC converter - Motor drive switch - DC/AC inverter - Solar micro inverter - Class D audio amplifier ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Avalanche Current Single Avalanche Energy a Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C L = 0.5 m H TC = 25 °C TC = 100 °C VDS VGS IDM IAS EAS TJ, Tstg LIMIT 200 ± 20 110 90 330 780 110 300b 150b -55 to +150 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). SYMBOL Rth JA Rth JC LIMIT 40 0.5 UNIT...