VBGP1201N Description
VBGP1201N N-Channel 200 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 200 0.010at VGS = 10 V ID (A) 110 Qg (TYP.) 75nC.
VBGP1201N Key Features
- SGT technology Power MOSFET
- 100 % Rg and UIS tested
- Maximum 150 °C junction temperature