VBJ2102M
VBJ2102M is P-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFET
- 100% Rg and UIS Tested
APPLICATIONS
- Active Clamp in Intermediate DC/
DC Power Supplies
- H-Bridge High Side Switch for
Lighting Application
D P-Channel MOSFET
Available
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
Pulsed Drain Current
TA = 70 °C IDM
Continuous Source-Drain Diode Current
Avalanche Current Single-Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s.
Limit
- 100 ±...
