VBJ2102M - P-Channel MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
100% Rg and UIS Tested.

VBJ2102M p-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	VBJ2102M
Manufacturer	VBsemi
File Size	254.08 KB
Description	P-Channel MOSFET
Datasheet	VBJ2102M Datasheet

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Full PDF Text Transcription for VBJ2102M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VBJ2102M. For precise diagrams, tables, and layout, please refer to the original PDF.

VBJ2102M P-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 100 0.200...

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at VGS = - 10 V 0.230 at VGS = - 6 V SOT-223 D S D G ID (A) - 3.0 - 2.4 Qg (Typ.) 13.2 nC S G FEATURES • TrenchFET® Power MOSFET • 100% Rg and UIS Tested APPLICATIONS • Active Clamp in Intermediate DC/ DC Power Supplies • H-Bridge High Side Switch for Lighting Application D P-Channel MOSFET Available ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.