VBJ2102M Description
VBJ2102M P-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () - 100 0.200 at VGS = - 10 V 0.230 at VGS = - 6 V SOT-223 D S D G ID (A) - 3.0 - 2.4 Qg (Typ.) 13.2 nC S.
VBJ2102M Key Features
- TrenchFET® Power MOSFET
- 100% Rg and UIS Tested
VBJ2102M Applications
- Active Clamp in Intermediate DC/
- H-Bridge High Side Switch for