VBJ2658
VBJ2658 is P-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFET
- 100 % UIS Tested
APPLICATIONS
- Load Switch
SOT-223 D
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.1 m H
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 60 ± 20
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