VBZFB60N03
VBZFB60N03 is N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFET
- 100 % Rg and UIS Tested
- pliant to Ro HS Directive 2011/65/EU
APPLICATIONS
- OR-ing
- Server
- DC/DC
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.1 m H
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 30 ±...
