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VG36641641DT Datasheet CMOS Synchronous Dynamic Ram

Manufacturer: Vanguard International Semiconductor

Overview: VIS.

General Description

4 (word x bit x bank), respectively.

VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

All input and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are patible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII.

Key Features

  • Single 3.3V ( ± 0.3V ) power supply.
  • High speed clock cycle time -6 : 166MHz, available only on 4MX16 option -7 : 143MHz, 133MHz -7L: 133MHz -8H: 100MHz.
  • Fully synchronous operation referenced to clock rising edge.
  • Possible to assert random column access in every cycle.
  • Quad internal banks controlled by A12 & A13 (Bank Select).
  • Byte control by LDQM and UDQM for VG36641641D.
  • Programmable Wrap sequen.

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