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VG36641641DT

Manufacturer: Vanguard International Semiconductor

VG36641641DT datasheet by Vanguard International Semiconductor.

VG36641641DT datasheet preview

VG36641641DT Datasheet Details

Part number VG36641641DT
Datasheet VG36641641DT-VanguardInternationalSemiconductor.pdf
File Size 1.00 MB
Manufacturer Vanguard International Semiconductor
Description CMOS Synchronous Dynamic RAM
VG36641641DT page 2 VG36641641DT page 3

VG36641641DT Overview

4 (word x bit x bank), respectively. All input and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are patible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII.

VG36641641DT Key Features

  • Single 3.3V ( ± 0.3V ) power supply
  • Fully synchronous operation referenced to clock rising edge
  • Possible to assert random column access in every cycle
  • Quad internal banks controlled by A12 & A13 (Bank Select)
  • Byte control by LDQM and UDQM for VG36641641D
  • Programmable Wrap sequence (Sequential / Interleave)
  • Programmable burst length (1, 2, 4, 8 and full page)
  • Programmable /CAS latency (2 and 3)
  • Automatic precharge and controlled precharge
  • CBR (Auto) refresh and self refresh
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