VS1H18AS Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - High conversion efficiency - Pb-free lead plating; Ro HS pliant 100V/9A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V ID 100 V 16.5 mΩ 9A SOP8 Part ID VS1H18AS Package Type SOP8 Marking 1H18AS Tape and reel information 3000pcs/reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS IAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TC =25°C TC =25°C TA =70°C TC =25°C ID=16A TA =25°C TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance Junction-Ambient Rating...