VS1H42AI Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant 100V/42A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V ID 100 16.5 42 V mΩ A TO-251-L Part ID VS1H42AI Package Type TO-251-L Marking 1H42AI Tape and reel information 75pcs/Tube Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C ID=16A IAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TA =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Ra...