VS3009DS Datasheet | Vanguard Semiconductor

Features 30V/8A Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green pliant 30V/8A Dual N-Channel Advanced Power MOSFET SOP8 Description VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These Features bine to make this design an extremely efficient and reliable device for variety of DC-DC...