Datasheet4U Logo Datasheet4U.com

VS3019AD - N-Channel Advanced Power MOSFET

General Description

VS3019AD designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Key Features

  • Ron(typ. )=25 mΩ @VGS=10V Ron(typ. )=35 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3019AD 30V/19A N-Channel Advanced Power MOSFET.

📥 Download Datasheet

Datasheet Details

Part number VS3019AD
Manufacturer Vanguard Semiconductor
File Size 250.57 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3019AD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VS3000 Transmitter/Receiver Valens
VS3000A0S Transmitter/Receiver Valens
VS3000A0SESB Transmitter/Receiver Valens
VS300R HDBaseT Transmitter/Receiver Valens
VS300RA0S HDBaseT Transmitter/Receiver Valens

Other Datasheets by Vanguard Semiconductor

Part Number Description
VS30150AD N-Channel Advanced Power MOSFET
VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET
VS3038AO N-Channel Advanced Power MOSFET
VS3060AD 30V/60A N-Channel Advanced Power MOSFET
VS3060AS 30V/20A N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features Ron(typ.)=25 mΩ @VGS=10V Ron(typ.)=35 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3019AD 30V/19A N-Channel Advanced Power MOSFET Description VS3019AD designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.