• Part: VS3019AD
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 250.57 KB
Download VS3019AD Datasheet PDF
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Datasheet Summary

Features Ron(typ.)=25 mΩ @VGS=10V Ron(typ.)=35 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS pliant 30V/19A N-Channel Advanced Power MOSFET Description VS3019AD designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These Features bine to make this design an extremely efficient and reliable device for variety of DC-DC applications. TO-252...