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VS3060AS - 30V/20A N-Channel Advanced Power MOSFET

General Description

VS3060AS designed by the trench processing techniques to achieve extremely low on-resistance.

Key Features

  • Low On-Resistance.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Green Product.

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Datasheet Details

Part number VS3060AS
Manufacturer Vanguard Semiconductor
File Size 919.13 KB
Description 30V/20A N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3060AS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VS3060AS 30V/20A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦ Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant ♦Green Product Description VS3060AS designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.