VS3207ADT - N-Channel Advanced Power MOSFET

Vanguard Semiconductor

General Description

VS3207ADT designed by the trench processing techniques to achieve extremely low on-resistance.

Key Features

Low On-Resistance.
Fast Switching.
100% Avalanche Tested.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.

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VS3207ADT n-channel advanced power mosfet by Vanguard Semiconductor - Datasheet Preview

Datasheet Details

Part number	VS3207ADT
Manufacturer	Vanguard Semiconductor
File Size	232.38 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	VS3207ADT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VS3207ADT 80V/180A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant Description VS3207ADT designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.