VS3518AE Datasheet | Vanguard Semiconductor

Features - P-Channel，-5V Logic Level Control - Low on-resistance RDS(on) @ VGS=-4.5 V - Fast Switching and High efficiency - Enhancement mode - Pb-free lead plating; Ro HS pliant -30V/-35A P-Channel Advanced Power MOSFET V DS -30 V R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V 15 mΩ 23 mΩ I D -35 A PDFN3333 Part ID VS3518AE Package Type PDFN3333 Marking 3518AE Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=-10V Avalanche energy, single pulsed ② PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and junction temperature range Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case RJA Thermal...