VS3518AS Datasheet | Vanguard Semiconductor

Features - P-Channel，-5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=-4.5 V - 100% Avalanche test - Pb-free lead plating; Ro HS pliant -30V/-10A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -30 18 31.5 -10 V mΩ mΩ A SOP8 Part ID VS3518AS Package Type SOP8 Marking 3518AS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=-10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJL Thermal Resistance-Junction to Lead RθJA Thermal Resistance-Junction to Ambient Rating -30 -3.5...