VS6404AP Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Technology - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 60V/95A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 60 V 4.6 mΩ 5.3 mΩ 95 A PDFN5x6 Part ID VS6404AP Package Type PDFN5x6 Marking 6404AP Tape and reel information 3000PCS/Reel Maximum ratings, at TC =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction...