VS6408AS Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Technology - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 60V/15A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 60 V 7.8 mΩ 9.3 mΩ 15 A SOP8 Part ID VS6408AS Package Type SOP8 Marking 6408AS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJL Rθ JA Thermal Resistance-Junction to Lead Thermal Resistance-Junction to...