VS6406AT Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant 60V/110A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 5.7 mΩ R @DS(on),TYP VGS=4.5V 6.4 mΩ I D 110 A TO-220AB Part ID VS6406AT Package Type TO-220AB Marking 6406AT Tape and reel information 50pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC...