VS6602GP Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - VitoMOS® Ⅱ Technology - Fast Switching and High efficiency - Pb-free lead plating; RoHS pliant 60V/190A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 2.4 mΩ 3.5 mΩ 190 A PDFN5060X Part ID VS6602GP Package Type PDFN5060X Marking 6602GP Tape and reel information 3000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain...