VS6606GE - N-Channel Advanced Power MOSFET

Product Overview

Vanguard Semiconductor

Part number	VS6606GE
Manufacturer	Vanguard Semiconductor
File Size	552.31 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	VS6606GE Datasheet
Additional preview pages of the VS6606GE datasheet.

V DS R @ DS(on),TYP VGS=10V 65 V 5 mΩ.
Enhancement mode.
Low on-resistance RDS(on) @ VGS=4.5 V.
VitoMOS® Ⅱ Technology.
Fast Switching and High efficiency R @ DS(on),TYP VGS=4.5V ID 8 mΩ 70 A PDFN3333.
Pb-free lead plating; RoHS compliant; Halogen free Part ID VS6606GE Package Type PDFN3333 Marking 6606GE Tape and reel information 5000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage.

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Published: Apr 12, 2021 |