VS6606GE Datasheet | Vanguard Semiconductor

65V/70A N-Channel Advanced Power MOSFET Features V DS R @ DS(on),TYP VGS=10V 65 V 5 mΩ - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - VitoMOS® Ⅱ Technology - Fast Switching and High efficiency R @ DS(on),TYP VGS=4.5V ID 8 mΩ 70 A PDFN3333 - Pb-free lead plating; RoHS pliant; Halogen free Part ID VS6606GE Package Type PDFN3333 Marking 6606GE Tape and reel information 5000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS IS ID IDM IDSM EAS PD Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous...