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VS6606GE - N-Channel Advanced Power MOSFET

Features

  • V DS R @ DS(on),TYP VGS=10V 65 V 5 mΩ.
  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • VitoMOS® Ⅱ Technology.
  • Fast Switching and High efficiency R @ DS(on),TYP VGS=4.5V ID 8 mΩ 70 A PDFN3333.
  • Pb-free lead plating; RoHS compliant; Halogen free Part ID VS6606GE Package Type PDFN3333 Marking 6606GE Tape and reel information 5000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage.

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Datasheet Details

Part number VS6606GE
Manufacturer Vanguard Semiconductor
File Size 552.31 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS6606GE Datasheet
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Full PDF Text Transcription

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VS6606GE 65V/70A N-Channel Advanced Power MOSFET Features V DS R @ DS(on),TYP VGS=10V 65 V 5 mΩ  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency R @ DS(on),TYP VGS=4.
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