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VS6808AH - Dual N-Channel Advanced Power MOSFET

Description

VS6808AH designed by the trench processing techniques to achieve extremely low on-resistance,fast switching speed and improved transfer effective .

Features

  • Ron(typ. )=15 mΩ @VGS=4.5V Low On-Resistance Fast Switching ESD Protection Green Product.

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Datasheet preview – VS6808AH

Datasheet Details

Part number VS6808AH
Manufacturer Vanguard Semiconductor
File Size 255.92 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet VS6808AH Datasheet
Additional preview pages of the VS6808AH datasheet.

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Full PDF Text Transcription

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VS6808AH 20V/6A Common-Drain Dual N-Channel Advanced Power MOSFET Features Ron(typ.)=15 mΩ @VGS=4.5V Low On-Resistance Fast Switching ESD Protection Green Product Description VS6808AH designed by the trench processing techniques to achieve extremely low on-resistance,fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
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