Datasheet4U Logo Datasheet4U.com

VS6808DH - Dual N-Channel Advanced Power MOSFET

Features

  • Dual N-Channel，2.5V Logic Level Control.
  • Low on-resistance RDS(on) @ VGS=2.5 V.
  • Fast Switching.
  • ESD Protection HBM 2.5KV.
  • High Effective.
  • Pb-free lead plating; RoHS compliant; Halogen-Free V DS R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID 20 V 18 mΩ 25 mΩ 6A SOT23-6L Part ID VS6808DH Package Type SOT23-6L Marking VS05 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain.

📥 Download Datasheet

Datasheet preview – VS6808DH

Datasheet Details

Part number VS6808DH
Manufacturer Vanguard Semiconductor
File Size 566.96 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet VS6808DH Datasheet
Additional preview pages of the VS6808DH datasheet.

📁 Similar Datasheet

  • VS6888BT - N-Channel 60V MOSFET (VBsemi)
  • VS6 - AC-DC / Configurable (Emerson)
  • VS6451 - Ultra small reflowable CIF+ camera module (ST Microelectronics)
  • VS6502 - VGA Color CMOS Image Sensor Module (ST Microelectronics)
  • VS6524 - VGA Mobile Camera Module (ST Microelectronics)
  • VS6552 - VGA Color CMOS Image Sensor Module (ST Microelectronics)
  • VS6590 - 0.5 Megapixel Camera Module (ST Microelectronics)
  • VS6613GE - 60V/46A N-Channel Advanced Power MOSFET (Vergiga)
  • VS6622AL - N-Channel 60V MOSFET (VBsemi)
  • VS6624 - 1.3 Megapixel Mobile Camera Module (ST Microelectronics)
Other Datasheets by Vanguard Semiconductor
  • VS6808AH - Dual N-Channel Advanced Power MOSFET
  • VS6880AT - N-Channel Advanced Power MOSFET
  • VS6880AT-K - N-Channel Advanced Power MOSFET
  • VS6888AT - N-Channel Advanced Power MOSFET
  • VS6888ATD - N-Channel Advanced Power MOSFET
  • VS6888BT - N-Channel Advanced Power MOSFET
  • VS6888BTD - N-Channel Advanced Power MOSFET
  • VS6016AS - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
VS6808DH 20V/6A Common-Drain Dual N-Channel Advanced Power MOSFET Features  Dual N-Channel，2.5V Logic Level Control  Low on-resistance RDS(on) @ VGS=2.5 V  Fast Switching  ESD Protection HBM 2.5KV  High Effective  Pb-free lead plating; RoHS compliant; Halogen-Free V DS R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID 20 V 18 mΩ 25 mΩ 6A SOT23-6L Part ID VS6808DH Package Type SOT23-6L Marking VS05 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=4.
Published: |