• Part: VS6808DH
  • Description: Dual N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 566.96 KB
Download VS6808DH Datasheet PDF
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Datasheet Summary

20V/6A mon-Drain Dual N-Channel Advanced Power MOSFET Features - Dual N-Channel,2.5V Logic Level Control - Low on-resistance RDS(on) @ VGS=2.5 V - Fast Switching - ESD Protection HBM 2.5KV - High Effective - Pb-free lead plating; RoHS pliant; Halogen-Free V DS R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID 20 V 18 mΩ 25 mΩ 6A SOT23-6L Part ID VS6808DH Package Type SOT23-6L Marking VS05 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=4.5V IDM Pulse drain current tested ① PD Maximum...