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VS6888AT - N-Channel Advanced Power MOSFET

Description

VS6888AT designed by the trench processing techniques to achieve extremely low on-resistance.

Features

  • Low On-Resistance.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.

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Datasheet preview – VS6888AT

Datasheet Details

Part number VS6888AT
Manufacturer Vanguard Semiconductor
File Size 253.62 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS6888AT Datasheet
Additional preview pages of the VS6888AT datasheet.

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Full PDF Text Transcription

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VS6888AT 65V/88A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant Description VS6888AT designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
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