• Part: VS6888BTD
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 533.93 KB
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Datasheet Summary

Features - N-Channel,10V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=10V - VitoMOS® Technology - 100% Avalanche test - Pb-free lead plating; RoHS pliant 65V/88A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 65 V 5.3 mΩ 88 A TO-263 Part ID VS6888BTD Package Type TO-263 Marking 6888BTD Tape and reel information 800pcs/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and...