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VS6888BTD - N-Channel Advanced Power MOSFET

Features

  • N-Channel，10V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=10V.
  • VitoMOS® Technology.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant VS6888BTD 65V/88A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 65 V 5.3 mΩ 88 A TO-263 Part ID VS6888BTD Package Type TO-263 Marking 6888BTD Tape and reel information 800pcs/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS.

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Datasheet Details

Part number VS6888BTD
Manufacturer Vanguard Semiconductor
File Size 533.93 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS6888BTD Datasheet
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Full PDF Text Transcription

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS6888BTD 65V/88A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 65 V 5.
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