• Part: VSB003N02LS
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 367.16 KB
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Datasheet Summary

Features - N-Channel,3.3V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=3.3V - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; RoHS pliant 20V/60A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5V R @DS(on),TYP VGS=3.3V ID 20 V 3.6 mΩ 4.2 mΩ 60 A TDFN3.3x3.3 . Part ID VSB003N02LS Package Type TDFN3.3x3.3 Marking 003N02L Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single...