Datasheet4U Logo Datasheet4U.com

VSB004P02KS - P-Channel Advanced Power MOSFET

Datasheet Summary

Features

  • P-Channel,-2.5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=-4.5 V.
  • 100 Avalanche Tested.
  • Fast Switching.
  • Pb-free lead plating; RoHS compliant VSB004P02KS -12V/-65A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-4.5 V R @DS(on),TYP VGS=-2.5V ID -12 V 4.8 mΩ 6 mΩ -65 A TDFN3.3x3.3 Part ID Package Type VSB004P02KS TDFN3.3x3.3 Marking Tape and reel information 004P02K 5000pcs/reel Maximum ratings, at T j =25 °C, unle.

📥 Download Datasheet

Datasheet preview – VSB004P02KS

Datasheet Details

Part number VSB004P02KS
Manufacturer Vanguard Semiconductor
File Size 456.97 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VSB004P02KS Datasheet
Additional preview pages of the VSB004P02KS datasheet.
Other Datasheets by Vanguard Semiconductor

Full PDF Text Transcription

Click to expand full text
Features  P-Channel,-2.5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  100 Avalanche Tested  Fast Switching  Pb-free lead plating; RoHS compliant VSB004P02KS -12V/-65A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-4.5 V R @DS(on),TYP VGS=-2.5V ID -12 V 4.8 mΩ 6 mΩ -65 A TDFN3.3x3.3 Part ID Package Type VSB004P02KS TDFN3.3x3.3 Marking Tape and reel information 004P02K 5000pcs/reel Maximum ratings, at T j =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=-4.
Published: |