VSB011N06MS Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5V - Fast Switching - Pb-free lead plating; RoHS pliant 60V/50A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5V ID 60 V 9 mΩ 11 mΩ 50 A TDFN3.3x3.3 . Part ID VSB011N06MS Package Type TDFN3.3x3.3 Marking 011N06M Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC...