• Part: VSB012P03MS
  • Description: P-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 462.89 KB
Download VSB012P03MS Datasheet PDF
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Datasheet Summary

Features - P-Channel - Very low on-resistance RDS(on) @ VGS=-4.5 V - 100 Avalanche Tested - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Pb-free lead plating; RoHS pliant -30V/-36A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 10 mΩ 14 mΩ -36 A TDFN3.3x3.3 Part ID Package Type VSB012P03MS TDFN3.3x3.3 Marking Tape and reel information 012P03M 5000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS Drain-Source Breakdown Voltage Maximum Junction Temperature TSTG Storage Temperature...